General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
   
Features
• –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V
                          RDS(ON) = 180 mΩ @ VGS = –2.5 V
                          RDS(ON) = 250 mΩ @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely
    low RDS(ON)
• Compact industry standard SC70-6 surface mount
    package
   
Applications
• Battery management
• Load switch