General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

FEATUREs
■ Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A
■ Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A
■ 100% UIL tested
■ RoHS Compliant

APPLICATION
■ DC - DC Conversion