General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FEATUREs
• 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V
• Low gate charge (28nC typical)
• Fast Switching
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability