General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
   
Features
• 34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V
                       RDS(ON) = 0.033 Ω @ VGS = 6 V
• Low gate charge (57 nC typical)
• Fast switching speed
• High performance trench technology for extremely
    low RDS(ON)
• High power and current handling capability.