General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

FEATUREs
• 5.5 A, 30 V.  RDS(ON)= 30 mΩ@ VGS= 4.5 V
                   RDS(ON)= 26 mΩ@ VGS= 10 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability