FDB035AN06A0 数据手册 ( 数据表 ) - ON Semiconductor
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ON Semiconductor
Features
• RDS(on) = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• QG(tot) = 95 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
APPLICATIONs
• Motor drives and Uninterruptible Power Supplies
• Battery Protection Circuit
• Synchronous Rectification for ATX / Server / Telecom PSU
N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.8 mΩ
ON Semiconductor
N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ
ON Semiconductor
N-Channel PowerTrench® MOSFET 75 V, 80 A, 6 mΩ
ON Semiconductor
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
NXP Semiconductors.
N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ
ON Semiconductor
N-Channel PowerTrench® MOSFET 80 V, 25 A, 21 mΩ
Fairchild Semiconductor
N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ
Fairchild Semiconductor
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK ( Rev : 2012_02 )
NXP Semiconductors.
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
Nexperia B.V. All rights reserved
N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ
ON Semiconductor