EPA120D-CP083 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
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Excelics Semiconductor, Inc.
FEATURES
• NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
• +29 dBm OUTPUT POWER AT 1dB COMPRESSION
• 18.0 dB GAIN AT 2 GHz
• 0.5x1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
High Efficiency Heterojunction Power FET
Unspecified
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Unspecified
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Unspecified
High Efficiency Heterojunction Power FET
Unspecified
High Efficiency Heterojunction Power FET
Unspecified