EPA1200A 数据手册 ( 数据表 ) - ETC
生产厂家

ETC
[Excelics]
High Efficiency Heterojunction Power FET
• +39.5dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
• 0.4 X 12,000 MICRON RECESSED
“MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL
HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 300mA PER BIN RANGE
High Efficiency Heterojunction Power FET
Unspecified
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Unspecified
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
Unspecified
High Efficiency Heterojunction Power FET
Unspecified