General Description
The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV800 provides a typical Word-Program time of 14 µsec and a typical Sector/Block-Erase time of 18 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. 

FEATUREs
◾ Single Power Supply
   Full voltage range from 2.7 to 3.6 volts
   for both read and write operations
◾ Sector-Erase Capability
   Uniform 2Kword sectors
◾ Block-Erase Capability
   Uniform 32Kword blocks
◾ Read Access Time
   Access time: 55, 70 and 90 ns
◾ Power Consumption
   Active current: 20 mA (Typical)
   Standby current: 2 µA (Typical)
◾ Erase/Program Features
   Sector-Erase Time: 18 ms (Typical)
   Block-Erase Time: 18 ms (Typical)
   Chip-Erase Time: 45 ms (Typical)
   Word-Program Time: 14µs (Typical)
   Chip Rewrite Time: 8 seconds (Typical)
◾ Automatic Write Timing
   Internal VPP Generation
◾ End-of-Program or End-of-Erase
   Detection
   Data# Polling
   Toggle Bit
◾ CMOS I/O Compatibility
◾ JEDEC Standard
   Pin-out and software command sets
   compatible with single-power supply Flash
   memory
◾ High Reliability
   Endurance cycles: 100K (Typical)
   Data retention: 10 years
◾ Package Option
   48-pin TSOP
   48-pin FBGA