
ELAN Microelectronics
General Description
The EM39LV010 is a 1M bits Flash memory organized as 128K x 8 bits. The EM39LV010 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV010 provides a typical Byte-Program time of 11 µsec and a typical Sector-Erase time of 40 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation.
FEATUREs
◾ Single Power Supply
Full voltage range from 2.7 to 3.6 volts
for both read and write operations
◾ Sector-Erase Capability
Uniform 4Kbyte sectors
◾ Read Access Time
Access time: 45, 70 and 90 ns
◾ Power Consumption
Active current: 15 mA (Typical)
Standby current: 1 µA (Typical)
◾ Erase/Program Features
Sector-Erase Time: 40 ms (Typical)
Chip-Erase Time: 40 ms (Typical)
Byte-Program Time: 11µs (Typical)
Chip Rewrite Time: 1.5 seconds (Typical)
◾ Automatic Write Timing
Internal VPP Generation
◾ End-of-Program or End-of-Erase
Detection
Data# Polling
Toggle Bit
◾ CMOS I/O Compatibility
◾ JEDEC Standard
Pin-out and software command sets
compatible with single-power supply Flash
memory
◾ High Reliability
Endurance cycles: 100K (Typical)
Data retention: 10 years
◾ Package Option
32-lead PLCC
32-pin TSOP
48-pin FBGA