ELD83NPT5 数据手册 ( 数据表 ) - Roithner LaserTechnik GmbH
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Roithner LaserTechnik GmbH
Scope:
The specification covers the appearance and characteristics of 830nm Laser Diode used as light source, It’s model is ELD83NPT5.This product is packaged with an ALGaAs multiple quantum well invisible laser diode chip and a silicon photodiode for monitoring optical power output. Oscillation transverse mode of this model is TE.
Multi-Quantum Well (MQW) Laser Diode
Roithner LaserTechnik GmbH
InAs Quantum Well Hall Element
Unspecified
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.