EIA1414-4P(2003) 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
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Excelics Semiconductor, Inc.
14.0-14.5GHz, 4W Internally Matched Power FET
• 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 27% TYPICAL)
• EIB FEATURES HIGH IP3(49dBm TYPICAL)
• +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
14.0-14.5GHz, 2W Internally Matched Power FET
Excelics Semiconductor, Inc.
14.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.75-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.75-14.5GHz, 4W Internally Matched Power FET
Excelics Semiconductor, Inc.
14.0-15.35GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET ( Rev : 2005 )
MITSUBISHI ELECTRIC
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET ( Rev : 2003 )
MITSUBISHI ELECTRIC
14.0~14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC