13.75-14.5GHz, 4W Internally Matched Power FET
• 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 27% TYPICAL)
• EIB FEATURES HIGH IP3(49dBm TYPICAL)
• +36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE
13.75-14.5GHz, 2W Internally Matched Power FET
Excelics Semiconductor, Inc.
13.75-14.5GHz, 8W Internally Matched Power FET
Excelics Semiconductor, Inc.
13.75-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 4W Internally Matched Power FET
Excelics Semiconductor, Inc.
13.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
14.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 2W Internally Matched Power FET
Excelics Semiconductor, Inc.