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EFA120D 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.

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零件编号
EFA120D

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2 Pages

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39.8 kB

生产厂家
Excelics
Excelics Semiconductor, Inc. 

FEATURES
• +28.0dBm TYPICAL OUTPUT POWER
• 19.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE

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Low Distortion GaAs Power FET
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Unspecified
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Unspecified
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
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Excelics Semiconductor, Inc.
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Excelics Semiconductor, Inc.
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Excelics Semiconductor, Inc.

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