EFA120D 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
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Excelics Semiconductor, Inc.
FEATURES
• +28.0dBm TYPICAL OUTPUT POWER
• 19.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.