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EFA120B-100F
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Excelics Semiconductor, Inc.
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EFA120B-100F 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• HERMETIC 100mil CERAMIC FLANGE PACKAGE
• +28.0dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN AT 8GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
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