DSS20-01AC 数据手册 ( 数据表 ) - IXYS CORPORATION
生产厂家

IXYS CORPORATION
Features
• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low cathode to tab capacitance(<15pF)
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
APPLICATIONs
• Rectifiers in switch mode power supplies (SMPS)
• Free wheeling diode in low voltage converters
TrenchMV Power MOSFET (Electrically Isolated Back Surface)
IXYS CORPORATION
TrenchMV Power MOSFET (Electrically Isolated Back Surface)
IXYS CORPORATION
TrenchMV Power MOSFET (Electrically Isolated Back Surface)
IXYS CORPORATION
TrenchMV Power MOSFET (Electrically Isolated Back Surface)
IXYS CORPORATION
Rectifier Diode ISOPLUS220™ Electrically Isolated Back Surface
IXYS CORPORATION
HiPerDyn™ Schottky Diode (Electrically Isolated Back Surface)
IXYS CORPORATION
Power MOSFET ISOPLUS220™ Electrically Isolated Back Surface
IXYS CORPORATION
TrenchMV™ Power MOSFET (Electrically Isolated Back Surface)
IXYS CORPORATION
Trench Power MOSFET ISOPLUS220™ Electrically Isolated Back Surface
IXYS CORPORATION
PolarHT™ HiPerFET Power MOSFET (Electrically Isolated Back Surface)
IXYS CORPORATION