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DS1220Y 数据手册 ( 数据表 ) - Dallas Semiconductor -> Maxim Integrated

DS1220Y image

零件编号
DS1220Y

产品描述 (功能)

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9 Pages

File Size
370.4 kB

生产厂家
Dallas
Dallas Semiconductor -> Maxim Integrated 

DESCRIPTION
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that
constantly monitor VCCfor an out-of-tolerance condition.


FEATURES
10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 2k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Full ±10% operating range
Optional industrial temperature range of
-40°C to +85°C, designated IND

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零件编号
产品描述 (功能)
视图
生产厂家
16k Nonvolatile SRAM
PDF
Dallas Semiconductor -> Maxim Integrated
16k Nonvolatile SRAM ( Rev : 2010 )
PDF
Dallas Semiconductor -> Maxim Integrated
16k Nonvolatile SRAM
PDF
Dallas Semiconductor -> Maxim Integrated
16k Nonvolatile SRAM
PDF
Dallas Semiconductor -> Maxim Integrated
16K Nonvolatile SRAM
PDF
Unspecified
NVRAM 16k Nonvolatile SRAM
PDF
Maxim Integrated
2048k Nonvolatile SRAM ( Rev : 2010 )
PDF
Maxim Integrated
8M Nonvolatile SRAM
PDF
Maxim Integrated
64k Nonvolatile SRAM
PDF
Dallas Semiconductor -> Maxim Integrated
4096k Nonvolatile SRAM
PDF
Dallas Semiconductor -> Maxim Integrated

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