DNLS320E 数据手册 ( 数据表 ) - Diodes Incorporated.
生产厂家

Diodes Incorporated.
Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Resistance RCE(SAT) = 80mΩ at 3A
• High DC Current Gain hFE > 400 at IC = 2A
• Complementary PNP Type Available (DPLS325E)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR ( Rev : 2009 )
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR ( Rev : 2009 )
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR ( Rev : 2021 )
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Diodes Incorporated.