Functional Description
The CY7C199N is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199NN is in the standard 300-mil-wide DIP, SOJ, and LCC packages.

FEATUREs
•High speed
  —12 ns
• Fast tDOE
• CMOS for optimum speed/power
• Low active power
  — 467 mW (max, 12 ns “L” version)
• Low standby power
  — 0.275 mW (max, “L” version)
• 2V data retention (“L” version only)
• Easy memory expansion with CEand OEfeatures
• TTL-compatible inputs and outputs
• Automatic power-down when deselected