Functional Description
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

FEATUREs
■ 20 ns, 25 ns, and 45 ns access times
■ Internally organized as 512 K × 8 (CY14B104LA) or 256 K × 16 (CY14B104NA)
■ Hands off automatic STORE on power-down with only a small capacitor
■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
■ RECALL to SRAM initiated by software or power-up
■ Infinite read, write, and recall cycles
■ 1 million STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 3 V +20, –10 operation
■ Industrial temperature
■ Packages
    ❐ 44-/54-pin thin small outline package (TSOP) Type II
    ❐ 48-ball fine-pitch ball grid array (FBGA)
■ Pb-free and restriction of hazardous substances (RoHS) compliant