CP593(2006) 数据手册 ( 数据表 ) - Central Semiconductor
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Central Semiconductor
PROCESS DETAILS
Process Epitaxial Planar
Die Size 19 x 19 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 3.5 x 4.3 MILS
Emitter Bonding Pad Area 3.5 x 4.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Small Signal Transistors PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2006 )
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistors NPN - Amp Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
