零件编号
CP192V
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Central Semiconductor
CP192V 数据手册 ( 数据表 ) - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 13 x 17 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 3.0 X 3.0 MILS
Emitter Bonding Pad Area 3.0 X 3.0 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
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生产厂家
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