CGD1042H(2007) 数据手册 ( 数据表 ) - NXP Semiconductors.
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NXP Semiconductors.
General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
FEATUREs
■ High output power capability
■ Excellent linearity
■ Extremely low noise
■ Excellent return loss properties
■ Rugged construction
■ Unconditionally stable
■ Thermal optimized design
APPLICATIONs
■ CATV systems operating in the 40 MHz to 1000 MHz frequency range
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1 GHz, 25 dB gain high output power doubler
NXP Semiconductors.
1 GHz, 25 dB gain GaAs high output power doubler
NXP Semiconductors.
1 GHz, 27 dB gain GaAs high output power doubler
NXP Semiconductors.
1 GHz CATV 23 dB POWER DOUBLER AMPLIFIER
NEC => Renesas Technology
1 GHz CATV 25 dB POWER DOUBLER AMPLIFIER
NEC => Renesas Technology
1 GHz CATV 24 dB POWER DOUBLER AMPLIFIER
California Eastern Laboratories.
1 GHz CATV 27 dB POWER DOUBLER AMPLIFIER
California Eastern Laboratories.
1 GHz CATV 19 dB POWER DOUBLER AMPLIFIER
California Eastern Laboratories.
1 GHz CATV 19 dB POWER DOUBLER AMPLIFIER
NEC => Renesas Technology
1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER
California Eastern Laboratories.