General Description
These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs which improve transfer characteristics by providing very high gain. All inputs are protected against static discharge with diodes to VDD and VSS.

FEATUREs
■ Wide supply voltage range: 3.0V to 15V
■ High noise immunity: 0.45 VDD (typ)
■ Low power TTL compatibility: fan out of 2 driving 74L or 1 driving 74LS
■ 5V–10V–15V parametric ratings
■ Symmetrical output characteristics
■ Maximum input leakage 1 µA at 15V over full temperature range