
Harris Semiconductor
The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.
Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.
FEATUREs
• Matched Monolithic General Purpose Transistors
• hFE Matched . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10%
• VBE Matched
- CA3018A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2mV
- CA3018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
• Operation From DC to 120MHz
• Wide Operating Current Range
• CA3018A Performance Characteristics Controlled from 10µA to 10mA
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• Full Military Temperature Range . . . . . . . -55°C to 125°C
APPLICATIONs
• Two Isolated Transistors and a Darlington Connected Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018 Integrated Circuit Transistor Array” for Suggested Applications