C5030 数据手册 ( 数据表 ) - Toshiba
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Strobe Flash Applications
Medium Power Amplifier Applications
• High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 4 A, IB = 40 mA)
• High collector power dissipation: PC = 1.3 W
TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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