零件编号
C4881
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New Jersey Semiconductor
C4881 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
·High Switching Speed
·Low Collector Saturation Voltage-: VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA)
APPLICATIONS
·Designed for high current switching applications.
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