C4505 数据手册 ( 数据表 ) - ROHM Semiconductor
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ROHM Semiconductor
Features
1) High breakdown voltage. (BVCEO = 400V)
2) Low saturation voltage, typically VCE (sat)= 0.05V at IC/ IB = 10mA / 1mA.
3) High switching speed, typically tf = 1.7µs at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.
Power Transistor (400V, 0.1A)
ROHM Semiconductor
PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor ( Rev : 2013 )
Secos Corporation.
PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor
Secos Corporation.
High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A) ( Rev : RevA )
ROHM Semiconductor
High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A)
ROHM Semiconductor
Power Transistor (400V, 0.5A) ( Rev : RevA )
ROHM Semiconductor
Power Transistor(400V,0.5A)
ROHM Semiconductor
General purpose transistor(50V,0.1A) ( Rev : 2010 )
ROHM Semiconductor
Chroma amplifier transistor (300V, 0.1A) ( Rev : 2009 )
ROHM Semiconductor
Chroma Amplifier Transistor (300V, 0.1A)
Unspecified