C2715 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
High Frequency Amplifier Applications
• High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz)
• Recommended for FM IF, OSC stage and AM CONV. IF stage.
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
Unspecified
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
Unspecified
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
