零件编号
C2669
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Toshiba
C2669(1998) 数据手册 ( 数据表 ) - Toshiba
Toshiba
HIGH FREQUENCY AMPLIFIER APPLICATIONS
• High Power Gain: Gpe = 30dB (Typ.) (f = 10.7 MHz)
• Recommended for FM IF, OSC Stage and AM CONV, IF Stage.
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) ( Rev : 1998 )
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) ( Rev : 2007 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
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