BUZ102S 数据手册 ( 数据表 ) - Infineon Technologies
生产厂家
Infineon Technologies
Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175 ˚C operating temperature
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REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
International Rectifier
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Siemens AG
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Siemens AG
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRNANSISTOR
International Rectifier
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET® TRANSISTOR
International Rectifier
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
