BUX11A 数据手册 ( 数据表 ) - GE Solid State
生产厂家
GE Solid State
High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor
FEATUREs:
■ VCEO = 190 V
■ IC = 20 A
■ PT = 200 W
High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors
GE Solid State
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
New Jersey Semiconductor
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
Comset Semiconductors
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
Comset Semiconductors
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
Comset Semiconductors
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
Comset Semiconductors
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
Comset Semiconductors
HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
Comset Semiconductors
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ( Rev : 2012 )
Comset Semiconductors
HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR ( Rev : 2012 )
Comset Semiconductors
