BUL791 数据手册 ( 数据表 ) - Bourns, Inc
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Bourns, Inc
● Designed Specifically for High Frequency Electronic Ballasts up to 125 W
● hFE 6 to 22 at VCE = 1 V, IC = 2 A
● Low Power Losses (On-state and Switching)
● Key Parameters Characterised at High Temperature
● Tight and Reproducible Parametric Distributions
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor