零件编号
BUL45D2G
Other PDF
PDF
page
11 Pages
File Size
223.3 kB
生产厂家
ON Semiconductor
BUL45D2G(2010) 数据手册 ( 数据表 ) - ON Semiconductor
ON Semiconductor
High Speed, High Gain Bipolar NPN Power Transistor
with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network
The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application.
FEATUREs
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
• These Devices are Pb−Free and are RoHS Compliant*
零件编号
产品描述 (功能)
视图
生产厂家
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability ( Rev : 2003 )
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability ( Rev : 2011 )
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability
ON Semiconductor
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
IXYS CORPORATION
Share Link: 