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BTS621L1E3230 数据手册 ( 数据表 ) - Siemens AG

BTS621L1 image

零件编号
BTS621L1E3230

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14 Pages

File Size
190.4 kB

生产厂家
Siemens
Siemens AG 

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.


FEATUREs
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection


APPLICATION
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits

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零件编号
产品描述 (功能)
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生产厂家
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Siemens AG
Smart Two Channel Highside Power Switch
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Infineon Technologies
Smart Two Channel Highside Power Switch
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Siemens AG
Smart Two Channel Highside Power Switch
PDF
Siemens AG
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies

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