BTD965N3-S-T1-G 数据手册 ( 数据表 ) - Cystech Electonics Corp.
生产厂家
Cystech Electonics Corp.
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386N3
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
