BTC4505A3 数据手册 ( 数据表 ) - Cystech Electonics Corp.
生产厂家
Cystech Electonics Corp.
Features
• High breakdown voltage. (BVCEO = 400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.
• Complementary to BTA1759A3
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
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High Voltage NPN Epitaxial Planar Transistor
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High Voltage NPN Epitaxial Planar Transistor
Formosa Technology
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor ( Rev : 2018 )
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
