BT131-600E 数据手册 ( 数据表 ) - Kersemi Electronic Co., Ltd.
生产厂家

Kersemi Electronic Co., Ltd.
Description
This MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.