General description
135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

FEATUREs
■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA:
    ◆ Average output power = 26.5 W
    ◆ Power gain = 21.0 dB
    ◆ Efficiency = 28.0 %
    ◆ ACPR = −39 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (800 MHz to 1000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

APPLICATIONs
■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range