Description
Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. With high power gain, low noise figure, large dynamic range and ideal current characteristics, the use of SOT -323 ultra compact chip package, mainly used in the VHF, UHF and CATV high frequency wideband low-noise amplifier

FEATURE
   High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V，IC=40mA，f=0.9GHz
   Low noise: NF TYP. Value is 1.8dB           @ VCE=10V，IC=10mA，f=0.9GHz
   fT (TYP.) : TYP. Value is 9GHz                  @ VCE=8V，IC=40mA，f=1GHz