DESCRIPTION
Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties.

FEATURES
• High power gain
• High output voltage
• High maximum junction temperature
• Gold metallization ensures excellent reliability.

APPLICATIONS
    It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.