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BD82004FVJ-MGE2 数据手册 ( 数据表 ) - ROHM Semiconductor

BD82004FVJ-M image

零件编号
BD82004FVJ-MGE2

Other PDF
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page
26 Pages

File Size
1.6 MB

生产厂家
ROHM
ROHM Semiconductor 

General Description
BD82004FVJ-M and BD82005FVJ-M are low on-resistance N-Channel MOSFET high-side power switches optimized for Universal Serial Bus (USB) applications. BD82004FVJ-M and BD82005FVJ-M are equipped with the function of over-current protection, thermal shutdown, under-voltage lockout and soft-start.


FEATUREs
◾ AEC-Q100 Qualified
◾ Built-in Low ON-Resistance (Typ 70mΩ)
   N-Channel MOSFET
◾ Current Limit Threshold 1.5A
◾ Control Input Logic
   ➢ Active “High” Control Logic: BD82004FVJ-M
   ➢ Active “Low” Control Logic: BD82005FVJ-M
◾ Soft-Start Circuit
◾ Over-Current Protection
◾ Thermal Shutdown
◾ Under-Voltage Lockout Protection
◾ Open-Drain Fault Flag Output
◾ TTL Enable Input


APPLICATIONs
   Car Accessory


零件编号
产品描述 (功能)
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