BD678AG 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家

Inchange Semiconductor
DESCRIPTION
• Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60V
• DC Current Gain—
: hFE = 750(Min) @ IC= -2 A
• Complement to Type BD677A
• G=Pb-Free Package
APPLICATIONS
• Designed for use as output devices in complementary
general-purpose amplifier app
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor