零件编号
BD6665FM
Other PDF
no available.
PDF
page
2 Pages
File Size
69.2 kB
生产厂家

ROHM Semiconductor
Description
The BD6665FM has achieved high-efficiency and low power consumption due to the adoption of MOSFET output and direct PWM drive. Power save circuit, current limit circuit, FG three phase synthesis output, hall bias, reverse protection circuit, short brake SW, and rotation direction detection terminal are incorporated. The result is a multi-function and high-performance IC.
Features
1) Direct PWM drive
2) Built-in power save circuit
3) Built-in current limit circuit
4) Built-in FG three-phase synthesis output
5) Built-in hall bias
6) Built-in reverse protection circuit
7) Low power consumption due to MOSFET output
8) Built-in short brake SW
9) Built-in rotation direction detection terminal
Applications
CD-ROM/RW