零件编号
BD313
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Inchange Semiconductor
BD313 数据手册 ( 数据表 ) - Inchange Semiconductor
Inchange Semiconductor
Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC= 4A
·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.0 V(Max)@ IC= 5A
·Complement to Type BD314
APPLICATIONS
·Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.
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