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BD249 数据手册 ( 数据表 ) - New Jersey Semiconductor
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New Jersey Semiconductor
DESCRIPTION
• Collector Current -lc= 25A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A
80V(Min)- BD249B; 100V(Min)- BD249C
• Complement to Type BD250/A/B/C
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor