Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

FEATUREs
• BVCEO > 45V
• IC = 100mA High Collector Current
• PD = 435mW Power Dissipation
• 0.48mm2 Package Footprint, 16 Times Smaller than SOT23
• 0.4mm Height Package Minimizing Off-Board Profile
• Complementary PNP Type BC857BFA
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)