BB101MAU-TL-E 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Renesas Electronics
