
Alliance Semiconductor
FUNCTIONAL DESCRIPTION
The AS29F200 is a 2 megabit, 5 volt only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. For flexible erase and program capability, the 2 megabits of data is divided into 7 sectors: one 16K byte, two 8K byte, one 32K byte, and three 64K bytes. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29F200 is offered in JEDEC standard 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed and erased in-system with a single 5.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers.
FEATUREs
• Organization: 256K×8 or 128K×16
• Sector architecture
- One 16K; two 8K; one 32K; and three 64K byte sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
• Single 5.0±0.5V power supply for read/write operations
• Sector protection
• High speed 55/70/90/120 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified address
• Automated on-chip erase algorith
- Automatically preprograms/erases chip or specified sectors
• 10,000 write/erase cycle endurance
• Hardware RESET pin
- Resets internal state machine to read mode
• Low power consumption
- 20 mA typical read current
- 30 mA typical program current
- 300 µA typical standby current
- 1 µA typical standby current (RESET = 0)
• JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO
• Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- RY/BY output
• Erase suspend/resume
- Supports reading data from a sector not being erased
• Low VCC write lock-out below 2.8V