Description：
   This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application.

FEATUREs：
N-Channel: VDS=40V,ID=6.7A,RDS(ON)<32mΩ @VGS=10V
P-Channel: VDS=-40V,ID=-7.2A,RDS(ON)<40mΩ @VGS=-10V

1) High Power and current handing capability.
2) Lead free product is acquired.
3) Surface Mount Package.